A Half Bridge Inverter with ultra fast IGBT Transistors

Abstract

The paper analyzes the operation of a single-phase inverter in a half-bridge connection with ultra-fast IGBT transistors and flyback diodes (SKM100GB125DN module, manufactured by Semikron). The Simplorer program package was used to model the operation of the exchanger, which is specially adapted to the electrothermal modeling of power electronics circuits. A laboratory model of the exchanger was also created for experimental verification of the simulation results. The control-logic unit of the inverter consists of a stabilized power source, a pulse-width modulator SG3525A and a hybrid control circuit SKHI22B. In doing so, the possibility of changing the transistor assembly frequency and the dead time is ensured. A good agreement between the simulation and experimental results was recorded.

Dinko Vukadinović

Full Professor | Department of Power Electronics and Control

Full professor at the Faculty of Electrical Engineering, Mechanical Engineering, and Naval Architecture in Split, specialized in modern control systems for power electronic converters, electric motors, and generators. At the Power Electronics Research Laboratory, he leads experimental projects and develops advanced methods for regulating electrical machines and converters, while supervising doctoral research in these areas.